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APTGT400U120D4G
Single switch Trench + Field Stop IGBT Power Module
1
VCES = 1200V IC = 400A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * * * * Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration
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Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 650 400 800 20 1785 800A@1050V Unit V A
APTGT400U120D4G - Rev 2 July, 2008
V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT400U120D4G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 400A Tj = 125C VGE = VCE , IC = 12mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 750 2.1 6.5 600 Unit A V V nA
Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=400A VCE=600V Inductive Switching (25C) VGE = 15V VBus = 600V IC = 400A RG = 1.8 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 400A RG = 1.8 VGE = 15V Tj = 125C VBus = 600V IC = 400A Tj = 125C RG = 1.8 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Min Typ 28 1.6 1.2 3.7 280 90 550 130 300 100 650 180 33 mJ 59 1600 A ns Max Unit nF C
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 400A VR = 600V IF = 400A VGE = 0V Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1200 Typ Max 750 1000 400 1.6 1.6 250 350 40 75 18 34 2.1 Unit V A A V ns C mJ
APTGT400U120D4G - Rev 2 July, 2008
di/dt =4000A/s
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APTGT400U120D4G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 2500 -40 -40 -40 3 1 Min Typ Max 0.07 0.13 150 125 125 5 2 350 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
D4 Package outline (dimensions in mm)
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APTGT400U120D4G - Rev 2 July, 2008
APTGT400U120D4G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 800 TJ = 125C
VGE=17V VGE=13V VGE=15V
800
TJ=25C
600
IC (A)
TJ=125C
600 IC (A)
400
400
VGE=9V
200
200
0 0 1 2 VCE (V) 3 4
0 0 1 2 VCE (V) 3 4
800
Transfert Characteristics 140
TJ=25C
Energy losses vs Collector Current 120
VCE = 600V VGE = 15V RG = 1.8 TJ = 125C Eoff
600 IC (A)
TJ=125C
100 E (mJ) 80 60 40 20
Eon
400
Er
200
TJ=125C
Eon
0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 200 175 150 E (mJ) 125 100 75 50 25 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14
Er VCE = 600V VGE =15V IC = 400A TJ = 125C
0 0 100 200 300 400 500 600 700 800 IC (A) Reverse Bias Safe Operating Area 1000
Eon
800 IC (A) 600 400 200 0 0 400 800 VCE (V) 1200 1600
Eoff
Eoff
VGE=15V TJ=125C RG=1.8
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 Thermal Impedance (C/W) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.9
IGBT
0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
rectangular Pulse Duration (Seconds)
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APTGT400U120D4G - Rev 2 July, 2008
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APTGT400U120D4G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 50 40 30 20 10 0 0 100 200 300 IC (A) 400 500
Hard switching ZVS ZCS VCE=600V D=50% RG=1.8 TJ=125C Tc=75C
Forward Characteristic of diode 800
TJ=25C
600 IF (A)
400
200
TJ=125C TJ=25C
0 0 0.4 0.8 1.2 VF (V) 1.6 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.15 Thermal Impedance (C/W)
Diode
0.125 0.1 0.075 0.05 0.025 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGT400U120D4G - Rev 2 July, 2008

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